Electrical characterization of nonvolatile memory with SnO2 nano-particle in polyimide dielectric layer
- Authors
- Lee, Dong Uk; Han, Seung Joung; Seo, Ki Bong; Kim, Eun Kyu; Shin, Jin-Wook; Cho, Won-Ju; Kim, Young-Ho
- Issue Date
- Jul-2009
- Publisher
- ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD
- Keywords
- Nonvolatile memory; SnO2; Nano-particles; Polyimide; NFGM
- Citation
- SUPERLATTICES AND MICROSTRUCTURES, v.46, no.1-2, pp.176 - 181
- Indexed
- SCIE
SCOPUS
- Journal Title
- SUPERLATTICES AND MICROSTRUCTURES
- Volume
- 46
- Number
- 1-2
- Start Page
- 176
- End Page
- 181
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176525
- DOI
- 10.1016/j.spmi.2009.01.002
- ISSN
- 0749-6036
- Abstract
- The NFGM devices with SnO2 nano-particles on the p-type (100) silion-on-insulator wafers were fabricated and we analyzed the electrical characteristics such as subthreshold, threshold voltage shift and retention properties. The self-assembled SnO2 nanoparticles were created by chemical reaction between the polymer layers and 5-nm-thick Sn films. The SnO2 nano-particles had spherical shape with an average diameter of 15 nm and the particle density was 2.4 x 10(11) cm(-2). The electrons were charged into SnO2 nano-particles through SiO2 tunneling layer from channel of NFGM by using Fowler-Nordheim tunneling method. The memory windows of the fabricated NFGM maintained at 0.5 V after 10(3) S.
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