Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates
DC Field | Value | Language |
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dc.contributor.author | Yuk, Jong Min | - |
dc.contributor.author | No, Young Soo | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.contributor.author | Kim, Jin-young | - |
dc.contributor.author | Choi, Won Kook | - |
dc.date.accessioned | 2022-12-20T21:39:03Z | - |
dc.date.available | 2022-12-20T21:39:03Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176537 | - |
dc.description.abstract | Selected-area electron diffraction patterns for ZnO/Si heterostructures annealed at 800 degrees C showed that 30 degrees rotation domains were generated in the ZnO thin films. The plane-view high-resolution transmission electron microscopy (HRTEM) images for the ZnO thin films grown on n-Si substrates annealed at 800 degrees C showed that asymmetrical tilt grain boundaries were tilted by 16.5 degrees and 13.5 degrees from two grains with a 30 degrees tilted angle. The grain boundary planes of the two grains were (35 (8) over bar0) and (23 (5) over bar0). The atomic arrangements of the asymmetrically-tilted grain boundaries in 30 degrees rotation domains of ZnO thin films grown on n-Si substrates annealed at 800 degrees C are described on the basis of the HRTEM results. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.3938/jkps.55.246 | - |
dc.identifier.scopusid | 2-s2.0-69249161979 | - |
dc.identifier.wosid | 000268023600054 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.246 - 249 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 246 | - |
dc.citation.endPage | 249 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001498242 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordPlus | EPITAXIAL-FILMS | - |
dc.subject.keywordPlus | BUFFER LAYER | - |
dc.subject.keywordPlus | TEMPERATURE | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | EMISSION | - |
dc.subject.keywordPlus | EDGE | - |
dc.subject.keywordAuthor | ZnO thin film | - |
dc.subject.keywordAuthor | Si substrate | - |
dc.subject.keywordAuthor | Rotation domain | - |
dc.subject.keywordAuthor | Grain boundary | - |
dc.subject.keywordAuthor | Atomic arrangement | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=55&number=1&spage=246&year=2009 | - |
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