Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates
- Authors
- Yuk, Jong Min; No, Young Soo; Kim, Tae Whan; Kim, Jin-young; Choi, Won Kook
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- ZnO thin film; Si substrate; Rotation domain; Grain boundary; Atomic arrangement
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.246 - 249
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 246
- End Page
- 249
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176537
- DOI
- 10.3938/jkps.55.246
- ISSN
- 0374-4884
- Abstract
- Selected-area electron diffraction patterns for ZnO/Si heterostructures annealed at 800 degrees C showed that 30 degrees rotation domains were generated in the ZnO thin films. The plane-view high-resolution transmission electron microscopy (HRTEM) images for the ZnO thin films grown on n-Si substrates annealed at 800 degrees C showed that asymmetrical tilt grain boundaries were tilted by 16.5 degrees and 13.5 degrees from two grains with a 30 degrees tilted angle. The grain boundary planes of the two grains were (35 (8) over bar0) and (23 (5) over bar0). The atomic arrangements of the asymmetrically-tilted grain boundaries in 30 degrees rotation domains of ZnO thin films grown on n-Si substrates annealed at 800 degrees C are described on the basis of the HRTEM results.
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