Atomic Arrangements of Asymmetrically-tilted Grain Boundaries in 30 degrees Rotation Domains of ZnO Thin Films Grown on n-Si Substrates

Abstract

Selected-area electron diffraction patterns for ZnO/Si heterostructures annealed at 800 degrees C showed that 30 degrees rotation domains were generated in the ZnO thin films. The plane-view high-resolution transmission electron microscopy (HRTEM) images for the ZnO thin films grown on n-Si substrates annealed at 800 degrees C showed that asymmetrical tilt grain boundaries were tilted by 16.5 degrees and 13.5 degrees from two grains with a 30 degrees tilted angle. The grain boundary planes of the two grains were (35 (8) over bar0) and (23 (5) over bar0). The atomic arrangements of the asymmetrically-tilted grain boundaries in 30 degrees rotation domains of ZnO thin films grown on n-Si substrates annealed at 800 degrees C are described on the basis of the HRTEM results.