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Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks

Authors
Han, Doug SeokKoo, Hyun CheolLee, SolChang, JoonyeonHan, Suk-HeeKim, Eun KyuEom, Jonghwa
Issue Date
Jul-2009
Publisher
KOREAN PHYSICAL SOC
Keywords
Spin accumulation; Spin diffusion; Two-dimensional electron gas; Vanadium metal mask
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.207 - 211
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
55
Number
1
Start Page
207
End Page
211
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176539
DOI
10.3938/jkps.55.207
ISSN
0374-4884
Abstract
A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a Delta R of 4 m Omega is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.
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