Spin Transport in a Submicron-sized Structure Using Vanadium Metal Masks
- Authors
- Han, Doug Seok; Koo, Hyun Cheol; Lee, Sol; Chang, Joonyeon; Han, Suk-Hee; Kim, Eun Kyu; Eom, Jonghwa
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Spin accumulation; Spin diffusion; Two-dimensional electron gas; Vanadium metal mask
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.207 - 211
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 207
- End Page
- 211
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176539
- DOI
- 10.3938/jkps.55.207
- ISSN
- 0374-4884
- Abstract
- A new fabrication method to make a submicron-sized lateral spin-valve device is presented. In this method, magnetic patterns with nano-scaled channel lengths are implemented with Vanadium hard mask. For the non-local geometry, a Delta R of 4 m Omega is detected and for the local spin-valve geometry, magnetoresistance of 0.1% is obtained at T = 10 K. Due to the sharp magnetization switching of the flat ferromagnet, clear spin signal transitions between parallel and antiparallel alignments are observed. A quantitative analysis, including the spin-orbit interaction parameter, indicates the feasibility of spin transistor applications.
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