Effect of Post Thermal Annealing on Femtosecond Laser Crystallization of 500-nm-thick Amorphous Silicon Films
DC Field | Value | Language |
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dc.contributor.author | Lee, Geon Joon | - |
dc.contributor.author | Lee, YoungPak | - |
dc.contributor.author | Kim, Sung Soo | - |
dc.contributor.author | Cheong, Hyeonsik | - |
dc.contributor.author | Yoon, Chong Seung | - |
dc.contributor.author | Son, Yong-Duck | - |
dc.contributor.author | Jang, Jin | - |
dc.date.accessioned | 2022-12-20T21:39:46Z | - |
dc.date.available | 2022-12-20T21:39:46Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-07 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176543 | - |
dc.description.abstract | Femtosecond laser interference crystallization was studied in 500-nm-thick amorphous silicon (a-Si) films prepared on glass by using plasma-enhanced chemical-vapor deposition. The efficient crystallization of 500-nm-thick a-Si films was found to require post thermal annealing as well as laser annealing. Femtosecond laser interference technique was used to produce the seed pattern for the spatially-selected crystallization of a-Si. Post thermal annealing of the seed pattern was performed at 550 degrees C for 20 hours under a nitrogen atmosphere. By applying post thermal annealing to laser-crystallized silicon, the degree of crystallization was enhanced. The femtosecond laser-induced grating can be regarded as a pattern of alternating a-Si and mu c-Si (microcrystalline silicon) bands with a period of about 2 pin. Probe-beam diffraction, micro-Raman spectroscopy, and transmission electron microscopy were used to investigate the diffraction behavior and to confirm the spatially-selected crystallization of a-Si. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Effect of Post Thermal Annealing on Femtosecond Laser Crystallization of 500-nm-thick Amorphous Silicon Films | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Yoon, Chong Seung | - |
dc.identifier.doi | 10.3938/jkps.55.50 | - |
dc.identifier.scopusid | 2-s2.0-69249200559 | - |
dc.identifier.wosid | 000268023600012 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.50 - 54 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 55 | - |
dc.citation.number | 1 | - |
dc.citation.startPage | 50 | - |
dc.citation.endPage | 54 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001498078 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | NONLINEAR-OPTICAL PROPERTIES | - |
dc.subject.keywordPlus | PULSES | - |
dc.subject.keywordPlus | MICROCRYSTALLINE | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | GENERATION | - |
dc.subject.keywordAuthor | Femtosecond laser | - |
dc.subject.keywordAuthor | Grating | - |
dc.subject.keywordAuthor | Interference crystallization | - |
dc.subject.keywordAuthor | Post thermal annaling | - |
dc.subject.keywordAuthor | Amorphous silicon | - |
dc.subject.keywordAuthor | 500-nm-thick film | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=55&number=1&spage=50&year=2009 | - |
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