Effect of Post Thermal Annealing on Femtosecond Laser Crystallization of 500-nm-thick Amorphous Silicon Films
- Authors
- Lee, Geon Joon; Lee, YoungPak; Kim, Sung Soo; Cheong, Hyeonsik; Yoon, Chong Seung; Son, Yong-Duck; Jang, Jin
- Issue Date
- Jul-2009
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Femtosecond laser; Grating; Interference crystallization; Post thermal annaling; Amorphous silicon; 500-nm-thick film
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.55, no.1, pp.50 - 54
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 55
- Number
- 1
- Start Page
- 50
- End Page
- 54
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176543
- DOI
- 10.3938/jkps.55.50
- ISSN
- 0374-4884
- Abstract
- Femtosecond laser interference crystallization was studied in 500-nm-thick amorphous silicon (a-Si) films prepared on glass by using plasma-enhanced chemical-vapor deposition. The efficient crystallization of 500-nm-thick a-Si films was found to require post thermal annealing as well as laser annealing. Femtosecond laser interference technique was used to produce the seed pattern for the spatially-selected crystallization of a-Si. Post thermal annealing of the seed pattern was performed at 550 degrees C for 20 hours under a nitrogen atmosphere. By applying post thermal annealing to laser-crystallized silicon, the degree of crystallization was enhanced. The femtosecond laser-induced grating can be regarded as a pattern of alternating a-Si and mu c-Si (microcrystalline silicon) bands with a period of about 2 pin. Probe-beam diffraction, micro-Raman spectroscopy, and transmission electron microscopy were used to investigate the diffraction behavior and to confirm the spatially-selected crystallization of a-Si.
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