Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing

Abstract

High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin-films showed the domain boundaries of a (01 (1) over bar0) plane with a transition zone and a (01 (1) over bar1) plane without a transition zone. The 30 degrees in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5 degrees in comparison with that of neighboring 30 degrees in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.