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Atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing
- Issue Date
- Jun-2009
- Publisher
- SPRINGER HEIDELBERG
- Citation
- JOURNAL OF MATERIALS RESEARCH, v.24, no.6, pp.2006 - 2010
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF MATERIALS RESEARCH
- Volume
- 24
- Number
- 6
- Start Page
- 2006
- End Page
- 2010
- ISSN
- 0884-2914
- Abstract
- High-resolution transmission electron microscopy (HRTEM) images of annealed ZnO thin-films showed the domain boundaries of a (01 (1) over bar0) plane with a transition zone and a (01 (1) over bar1) plane without a transition zone. The 30 degrees in-plane rotation domain boundaries were formed in the ZnO thin films because the angle of the c-axis was tilted 3.5 degrees in comparison with that of neighboring 30 degrees in-plane rotation domains to reduce the misfit strain energy. The atomic arrangement variations of 30 degrees in-plane rotation domain boundaries in ZnO thin films grown on Si substrates due to thermal annealing are described.
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