Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals

Abstract

High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed.