Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals
DC Field | Value | Language |
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dc.contributor.author | Lee, Jong Hyun | - |
dc.contributor.author | Lee, Jun Seok | - |
dc.contributor.author | Cha, Seung Nam | - |
dc.contributor.author | Kim, Jong Min | - |
dc.contributor.author | Seo, Do Seok | - |
dc.contributor.author | Bin Im, Won | - |
dc.contributor.author | Hong, Jin Pyo | - |
dc.date.accessioned | 2022-12-20T22:28:29Z | - |
dc.date.available | 2022-12-20T22:28:29Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176882 | - |
dc.description.abstract | High mobility p-type ZnO:AlN thin films have been efficiently realized by utilizing pre-activated nitrogen (N) plasma sources with an inductively coupled dual target co-sputtering system. High density of N-plasma-radicals was generated with an additional RF power applied through a ring-shaped quartz-tube located inside the chamber during co-sputtering process. The AlN codoped ZnO film shows excellent p-type behavior with a high mobility and a hole concentration of 154 cm(2.)V(-1)s(-1) and about 3 x 10(18.) cm(-3) at 600 degrees C, respectively. Electrical properties of p-n homo-junction devices based on p-type ZnO film are also discussed. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Realization of high mobility p-type co-doped ZnO: AlN film with a high density of nitrogen-radicals | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, Jin Pyo | - |
dc.identifier.doi | 10.1016/j.tsf.2009.01.171 | - |
dc.identifier.scopusid | 2-s2.0-65149103311 | - |
dc.identifier.wosid | 000266696100033 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.517, no.14, pp.3950 - 3953 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 517 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 3950 | - |
dc.citation.endPage | 3953 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | OPTICAL-PROPERTIES | - |
dc.subject.keywordAuthor | ZnO | - |
dc.subject.keywordAuthor | Aluminium-nitride codoped | - |
dc.subject.keywordAuthor | p-type | - |
dc.subject.keywordAuthor | Homojunction | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609009001801?via%3Dihub | - |
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