Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP)
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Helen Y. | - |
dc.contributor.author | Park, Ye-Rim | - |
dc.contributor.author | Lee, Hag Joo | - |
dc.contributor.author | Lee, Nae-Eung | - |
dc.contributor.author | Jeong, Chan-Young | - |
dc.contributor.author | Ahn, Jinho | - |
dc.date.accessioned | 2022-12-20T22:28:37Z | - |
dc.date.available | 2022-12-20T22:28:37Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-05 | - |
dc.identifier.issn | 0040-6090 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/176883 | - |
dc.description.abstract | Extreme ultraviolet lithography (EUVL) is the most promising candidate for next generation lithography due to its feature size of 32 nm or below. We investigated the etching properties of materials in an alternating, phase-shift mask (PSM) structure for EUVL including a Ru top capping layer, Mo-Si multilayer (ML) and Ni etch stop layer (ESL), by varying the Cl-2/O-2 and Cl-2/Ar gas flow ratios, and the dc self-bias voltage (V-dc) in inductively coupled plasma (ICP). The Ru layer could be etched effectively in Cl-2/O-2 plasmas and Mo-Si ML could be etched with an infinitely high etch selectivity over Ni ESL in Cl-2/Ar plasmas, even with increasing overetch time. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCIENCE SA | - |
dc.title | Highly selective dry etching of alternating phase-shift mask (PSM) structures for extreme ultraviolet lithography (EUVL) using inductively coupled plasmas (ICP) | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1016/j.tsf.2009.01.119 | - |
dc.identifier.scopusid | 2-s2.0-65449150483 | - |
dc.identifier.wosid | 000266696100030 | - |
dc.identifier.bibliographicCitation | THIN SOLID FILMS, v.517, no.14, pp.3938 - 3941 | - |
dc.relation.isPartOf | THIN SOLID FILMS | - |
dc.citation.title | THIN SOLID FILMS | - |
dc.citation.volume | 517 | - |
dc.citation.number | 14 | - |
dc.citation.startPage | 3938 | - |
dc.citation.endPage | 3941 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RU ELECTRODE | - |
dc.subject.keywordPlus | O-2/CL-2 | - |
dc.subject.keywordPlus | MOLYBDENUM | - |
dc.subject.keywordPlus | SIMULATION | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | GAS | - |
dc.subject.keywordAuthor | Extreme ultraviolet lithography (EUVL) mask | - |
dc.subject.keywordAuthor | Alternating phase-shift mask (PSM) | - |
dc.subject.keywordAuthor | Inductively coupled plasma (ICP) | - |
dc.subject.keywordAuthor | Plasma etching | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0040609009001771?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.