Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes
DC Field | Value | Language |
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dc.contributor.author | Lee, Jae Hyung | - |
dc.contributor.author | Lee, Won Woo | - |
dc.contributor.author | Yang, Dong Won | - |
dc.contributor.author | Chang, Won Jun | - |
dc.contributor.author | Kwon, Sun Sang | - |
dc.contributor.author | Park, Won Ii | - |
dc.date.accessioned | 2021-08-02T13:51:47Z | - |
dc.date.available | 2021-08-02T13:51:47Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-04 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17698 | - |
dc.description.abstract | Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN-SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN-SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER CHEMICAL SOC | - |
dc.title | Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Won Ii | - |
dc.identifier.doi | 10.1021/acsami.8b02043 | - |
dc.identifier.scopusid | 2-s2.0-85045937077 | - |
dc.identifier.wosid | 000431150900100 | - |
dc.identifier.bibliographicCitation | ACS APPLIED MATERIALS & INTERFACES, v.10, no.16, pp.14170 - 14174 | - |
dc.relation.isPartOf | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.title | ACS APPLIED MATERIALS & INTERFACES | - |
dc.citation.volume | 10 | - |
dc.citation.number | 16 | - |
dc.citation.startPage | 14170 | - |
dc.citation.endPage | 14174 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.subject.keywordPlus | PHOTODETECTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | GaN-graphene Schottky junction | - |
dc.subject.keywordAuthor | UV photodetector | - |
dc.subject.keywordAuthor | photovoltaic/photoelectric response | - |
dc.subject.keywordAuthor | gas desorption | - |
dc.subject.keywordAuthor | photocurrent | - |
dc.subject.keywordAuthor | internal photoemission | - |
dc.subject.keywordAuthor | photocarrier dynamics | - |
dc.subject.keywordAuthor | molecular interaction | - |
dc.identifier.url | https://pubs.acs.org/doi/10.1021/acsami.8b02043 | - |
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