Anomalous Photovoltaic Response of Graphene-on-GaN Schottky Photodiodes
- Authors
- Lee, Jae Hyung; Lee, Won Woo; Yang, Dong Won; Chang, Won Jun; Kwon, Sun Sang; Park, Won Ii
- Issue Date
- Apr-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- GaN-graphene Schottky junction; UV photodetector; photovoltaic/photoelectric response; gas desorption; photocurrent; internal photoemission; photocarrier dynamics; molecular interaction
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.16, pp.14170 - 14174
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 16
- Start Page
- 14170
- End Page
- 14174
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17698
- DOI
- 10.1021/acsami.8b02043
- ISSN
- 1944-8244
- Abstract
- Graphene has attracted great attention as an alternative to conventional metallic or transparent conducting electrodes. Despite its similarities with conventional electrodes, recent studies have shown that a single-atom layer of graphene possesses unique characteristics, such as a tunable work function and transparencies for electric potential, reactivity, and wetting. Nevertheless, a systematic analysis of graphene and semiconductor junction characteristics has not yet been carried out. Here, we report the photoresponse characteristics of graphene-on-GaN Schottky junction photodiodes (Gr-GaN-SJPDs), showing a typical rectifying behavior and distinct photovoltaic and photoelectric responses. Following the initial abrupt response to UV illumination, the Gr-GaN-SJPDs exhibited a distinct difference in photocarrier dynamics depending on the applied bias voltage, which is characterized by either a negative or positive change in photocurrent with time. We propose underlying mechanisms for the anomalous photocarrier dynamics based on the interplay between electrostatic molecular interactions over the one-atom-thick graphene and GaN junction and trapped photocarriers at the defect states in the GaN thin film.
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