Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures
DC Field | Value | Language |
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dc.contributor.author | Kwon, Semyung | - |
dc.contributor.author | Bang, Seokhwan | - |
dc.contributor.author | Lee, Seungjun | - |
dc.contributor.author | Jeon, Sunyeol | - |
dc.contributor.author | Jeong, Wooho | - |
dc.contributor.author | Kim, Hyungchul | - |
dc.contributor.author | Gong, Su Cheol | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-20T23:01:33Z | - |
dc.date.available | 2022-12-20T23:01:33Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177142 | - |
dc.description.abstract | ZnO thin films were deposited by atomic layer deposition (ALD) at various temperatures and the resulting electrical and chemical properties were examined. The fraction of O-H bonds in ZnO films decreased from 0.39 to 0.24 with increasing processing temperatures. The O/Zn ratio decreased from 0.90 at 70 degrees C to 0.78 at 130 degrees C. The carrier concentration and resistivity changed sharply with decreasing temperature. The ZnO thin film transistors (TFTs) were fabricated at processing temperatures of 70 to 130 degrees C and the electrical properties of the TFT were as follows: the field-effect mobility ranged from 8.82 x 10(-3) to 6.11 x 10(-3) cm(2) V-1 s(-1), the on/off current ratio ranged from 1.28 x 10(6) to 2.43 x 10(6), the threshold voltage ranged from -12.5 to 14.7 V and the subthreshold swing ranged from 1.21 to 24.1 V/decade. The electrical characteristics of the ZnO TFT were enhanced as the processing temperature decreased. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Characteristics of the ZnO thin film transistor by atomic layer deposition at various temperatures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1088/0268-1242/24/3/035015 | - |
dc.identifier.wosid | 000263676900016 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.3, pp.1 - 6 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | CHANNEL LAYER | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordPlus | THICKNESS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0268-1242/24/3/035015 | - |
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