Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal-oxide-semiconductor field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Kim, Seong-Je | - |
dc.contributor.author | Shim, Tae-Hun | - |
dc.contributor.author | Choi, Ki-Ryoung | - |
dc.contributor.author | Park, Jea-Gun | - |
dc.date.accessioned | 2022-12-20T23:01:44Z | - |
dc.date.available | 2022-12-20T23:01:44Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-03 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177143 | - |
dc.description.abstract | From the viewpoint of the silicon thickness limit for mobility enhancement in a strained Si channel, we investigated the difference in the self-heating effect on electron mobility between strained silicon-on-insulator (sSOI) and strained Si grown on relaxed SiGe-on-insulator (epsilon-Si SGOI) n-metal-oxide-semiconductor field-effect transistors (MOSFETs) as a function of silicon thickness. We found, for the first time, by numerical simulation that when considered with the presence of self-heating in the silicon thickness range from 5 to 10 nm, the reduction in the mobility enhancement ratio of sSOI n-MOSFETs is less than that of epsilon-Si SGOI n-MOSFETs by numerical simulation. In addition, we confirmed that the quantum size effect, occurring at the peak mobility value of a 3 nm silicon thickness, disappeared in sSOI n-MOSFETs but was suppressed in epsilon-Si SGOI n-MOSFETs. Therefore, we propose that an sSOI n-MOSFET is a more promising device than a epsilon-Si SGOI n-MOSFET for high-performance devices with a design rule of less than 45 nm. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Comparative study of self-heating effect on electron mobility in nano-scale strained silicon-on-insulator and strained silicon grown on relaxed SiGe-on-insulator n-metal-oxide-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea-Gun | - |
dc.identifier.doi | 10.1088/0268-1242/24/3/035014 | - |
dc.identifier.scopusid | 2-s2.0-64549144218 | - |
dc.identifier.wosid | 000263676900015 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.3, pp.1 - 6 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | BiCMOS technology | - |
dc.subject.keywordPlus | Computer simulation | - |
dc.subject.keywordPlus | Dielectric devices | - |
dc.subject.keywordPlus | Electric conductivity | - |
dc.subject.keywordPlus | Electron mobility | - |
dc.subject.keywordPlus | Field effect transistors | - |
dc.subject.keywordPlus | Heating | - |
dc.subject.keywordPlus | Ion beams | - |
dc.subject.keywordPlus | Microsensors | - |
dc.subject.keywordPlus | MOS devices | - |
dc.subject.keywordPlus | Nonmetals | - |
dc.subject.keywordPlus | Semiconducting germanium compounds | - |
dc.subject.keywordPlus | Semiconducting silicon | - |
dc.subject.keywordPlus | Semiconducting silicon compounds | - |
dc.subject.keywordPlus | Semiconductor insulator boundaries | - |
dc.subject.keywordPlus | Silicon | - |
dc.subject.keywordPlus | Silicon alloys | - |
dc.subject.keywordPlus | Silicon on insulator technology | - |
dc.subject.keywordPlus | Spurious signal noise | - |
dc.subject.keywordPlus | Comparative studies | - |
dc.subject.keywordPlus | Design rules | - |
dc.subject.keywordPlus | High-performance devices | - |
dc.subject.keywordPlus | Metal-oxide-semiconductor field-effect transistors | - |
dc.subject.keywordPlus | Mobility enhancements | - |
dc.subject.keywordPlus | n-MOSFET | - |
dc.subject.keywordPlus | N-mosfets | - |
dc.subject.keywordPlus | Nano-scale | - |
dc.subject.keywordPlus | Numerical simulations | - |
dc.subject.keywordPlus | Peak mobilities | - |
dc.subject.keywordPlus | Quantum size effects | - |
dc.subject.keywordPlus | Relaxed sige on insulators | - |
dc.subject.keywordPlus | Self-heating | - |
dc.subject.keywordPlus | Self-heating effects | - |
dc.subject.keywordPlus | Silicon thickness | - |
dc.subject.keywordPlus | Strained Si channels | - |
dc.subject.keywordPlus | Strained silicon on insulators | - |
dc.subject.keywordPlus | Strained silicons | - |
dc.subject.keywordPlus | Strained-Si | - |
dc.subject.keywordPlus | MOSFET devices | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0268-1242/24/3/035014 | - |
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