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Optical properties of ZnO nanoparticles embedded in a silicon nitride layer formed by sputtering and thermal treatment

Authors
Oh, Do-HyunCho, Woon-JoKim, Tae Whan
Issue Date
Mar-2009
Publisher
ELSEVIER
Keywords
ZnO nanoparticles; Silicon nitride layer; Thermal annealing treatment; Optical properties
Citation
CURRENT APPLIED PHYSICS, v.9, no.2, pp.E173 - E175
Indexed
SCIE
SCOPUS
KCI
Journal Title
CURRENT APPLIED PHYSICS
Volume
9
Number
2
Start Page
E173
End Page
E175
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177174
DOI
10.1016/j.cap.2008.12.053
ISSN
1567-1739
Abstract
Transmission electron microscopy images of annealed ZnO/silicon nitride (SiNx) multilayer grown on Si (100) substrates showed that the ZnO nanoparticles were formed inside the SiNx layer. The photoluminescence (PL) spectrum of a sample consisting of ZnO/SiNx multilayer with a SiNx buffer layer annealed at 800 degrees C showed that only a strong ultraviolet (UV) emission peak around 376 nm, corresponding to the ZnO nanoparticles, appeared in the visible range. The full width at half maximum of the UV peak of the PL spectrum was approximately 13 nm indicative of the high-quality of the ZnO nanoparticles. The optical properties of the ZnO nanoparticles were enhanced with increasing thickness of the deposited ZnO thin film
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서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

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