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Electrical bistabilities and memory mechanisms of organic bistable devices based on colloidal ZnO quantum dot-polymethylmethacrylate polymer nanocomposites
- Issue Date
- Mar-2009
- Publisher
- AIP Publishing
- Keywords
- aluminium; colloids; filled polymers; II-VI semiconductors; indium compounds; nanocomposites; quantum well devices; random-access storage; semiconductor quantum dots; semiconductor-metal boundaries; transmission electron microscopy; zinc compounds
- Citation
- APPLIED PHYSICS LETTERS, v.94, no.13, pp.1 - 3
- Indexed
- SCIE
SCOPUS
- Journal Title
- APPLIED PHYSICS LETTERS
- Volume
- 94
- Number
- 13
- Start Page
- 1
- End Page
- 3
- ISSN
- 0003-6951
- Abstract
- Transmission electron microscopy images showed that colloidal ZnO quantum dots (QDs) were distributed around the surface of a polymethylmethacrylate (PMMA) polymer. Current-voltage (I-V) measurements on the Al/colloidal ZnO QDs blended with PMMA polymer layer/indium-tin-oxide/glass devices at 300 K showed a current bistability. The maximum ON/OFF ratio of the current bistability for the organic bistable devices (OBDs) was as large as 5x10(4), and the cycling endurance time of the ON/OFF switching for the OBDs was above 10(5). The memory mechanisms of the fabricated OBDs are described on the basis of the I-V results.
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