Nonvolatile memory property of WSI2 and TISI2 nano-particles in SIO2 dielectrics
- Authors
- Seo, Ki Bong; Han, Seung Jong; Lee, Dong Uk; Kim, Seon Pil; Kim, Eun Kyu
- Issue Date
- Feb-2009
- Publisher
- The Minerals, Metals & Materials Society
- Keywords
- Nano-floating gate memory; Nano-particles; Nonvolatile memory; TiSi2; WSi2
- Citation
- TMS Annual Meeting, v.3, pp.11 - 16
- Indexed
- SCOPUS
- Journal Title
- TMS Annual Meeting
- Volume
- 3
- Start Page
- 11
- End Page
- 16
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177243
- Abstract
- We have fabricated the nano-floating gate capacitors with WSi2 and TiSi2 nano-particles embedded in the SiO2 dielectrics. The WSi2 and TiSi2 nano-particles were created from metal silicide films during rapid thermal annealing process, and they have spherical shapes with diameters of 2-5 nm. The electrical properties of the WSi 2 and TiSi2 nano-particles were characterized by using capacitance-voltage measurement. Then, the flat-band voltage shift due to the charging effect of WSi2 and TiSi2 nano-particles were measured about 4.37 V and 4.23 V, respectively, when the bias voltages were swept from -7 V to +7 V. And, their memory windows were decreased from 2.4 V to 1.6 V and 2.7 V to 1 V, respectively, after 1 hr. It showed that the nano-floating gate capacitors with WSi2 and TiSi2 nano-particles have a feasibility of application to nonvolatile memory devices.
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