Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bang, Seokhwan | - |
dc.contributor.author | Lee, Seungjun | - |
dc.contributor.author | Jeon, Sunyeol | - |
dc.contributor.author | Kwon, Semyung | - |
dc.contributor.author | Jeong, Wooho | - |
dc.contributor.author | Kim, Honggyu | - |
dc.contributor.author | Shin, Iksup | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.contributor.author | Park, Hyung-ho | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-20T23:20:46Z | - |
dc.date.available | 2022-12-20T23:20:46Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2009-02 | - |
dc.identifier.issn | 0268-1242 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177269 | - |
dc.description.abstract | We compared the characteristics of bottom-gate ZnO-thin film transistors using poly-4-vinylphenol (PVP) and PVP/Al2O3 dielectrics. The PVP dielectric is more hydrophobic than the PVP/Al2O3 dielectric and is not useful for TFT devices because of its high leakage current density, but this leakage current density can be significantly reduced by inserting Al2O3. We deposited ZnO and Al2O3 films by atomic layer deposition (ALD) because it is a low-temperature process. The ZnO-TFTs with either a PVP or a PVP/Al2O3 dielectric exhibit typical field-effect transistor characteristics with n-channel properties. The ZnO-TFT containing PVP/Al2O3 exhibits clear pinch-off and excellent saturation with an enhanced mode operation. The on/off ratio of 7.9 x 10(4) for the device containing the hybrid dielectric is about three orders of magnitude higher than the ratio of 47 for the device containing PVP. The subthreshold gate swings are 12 V/decade for the TFT containing PVP and 1.2 V/decade for the TFT containing PVP/Al2O3. The density of the interface trap state is significantly lower in the device containing PVP/Al2O3 than in the ZnO-TFT containing PVP. The saturation mobility was 0.05 and 0.8 cm(2) V-1 s(-1), respectively, in the TFTs containing PVP and PVP/Al2O3. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IOP PUBLISHING LTD | - |
dc.title | Al2O3 buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1088/0268-1242/24/2/025008 | - |
dc.identifier.scopusid | 2-s2.0-64249092247 | - |
dc.identifier.wosid | 000262582700009 | - |
dc.identifier.bibliographicCitation | SEMICONDUCTOR SCIENCE AND TECHNOLOGY, v.24, no.2, pp.1 - 6 | - |
dc.relation.isPartOf | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | - |
dc.citation.volume | 24 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | RAY PHOTOELECTRON-SPECTROSCOPY | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1088/0268-1242/24/2/025008 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.