Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Joonsung | - |
dc.contributor.author | Kim, Tae Whan | - |
dc.date.accessioned | 2021-08-02T13:52:15Z | - |
dc.date.available | 2021-08-02T13:52:15Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-03 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17726 | - |
dc.description.abstract | The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | - |
dc.title | Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Tae Whan | - |
dc.identifier.doi | 10.1166/jnn.2018.14986 | - |
dc.identifier.wosid | 000426033400044 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.18, no.3, pp.1837 - 1840 | - |
dc.relation.isPartOf | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.title | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.citation.volume | 18 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1837 | - |
dc.citation.endPage | 1840 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.relation.journalResearchArea | Chemistry | - |
dc.relation.journalResearchArea | Science & Technology - Other Topics | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Chemistry, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Nanoscience & Nanotechnology | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Multidisciplinary | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.relation.journalWebOfScienceCategory | Physics, Condensed Matter | - |
dc.subject.keywordPlus | ANALOG PERFORMANCE | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordPlus | DEGRADATION | - |
dc.subject.keywordPlus | LENGTH | - |
dc.subject.keywordAuthor | FinFETs | - |
dc.subject.keywordAuthor | Fin Top Edge | - |
dc.subject.keywordAuthor | Effective Channel | - |
dc.subject.keywordAuthor | On-Current Level | - |
dc.subject.keywordAuthor | Electron Mobility | - |
dc.identifier.url | https://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000003/art00044 | - |
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