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Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs

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dc.contributor.authorAhn, Joonsung-
dc.contributor.authorKim, Tae Whan-
dc.date.accessioned2021-08-02T13:52:15Z-
dc.date.available2021-08-02T13:52:15Z-
dc.date.created2021-05-12-
dc.date.issued2018-03-
dc.identifier.issn1533-4880-
dc.identifier.urihttps://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17726-
dc.description.abstractThe effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.-
dc.language영어-
dc.language.isoen-
dc.publisherAMER SCIENTIFIC PUBLISHERS-
dc.titleEffect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs-
dc.typeArticle-
dc.contributor.affiliatedAuthorKim, Tae Whan-
dc.identifier.doi10.1166/jnn.2018.14986-
dc.identifier.wosid000426033400044-
dc.identifier.bibliographicCitationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v.18, no.3, pp.1837 - 1840-
dc.relation.isPartOfJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.titleJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.citation.volume18-
dc.citation.number3-
dc.citation.startPage1837-
dc.citation.endPage1840-
dc.type.rimsART-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.description.isOpenAccessN-
dc.description.journalRegisteredClassscie-
dc.relation.journalResearchAreaChemistry-
dc.relation.journalResearchAreaScience & Technology - Other Topics-
dc.relation.journalResearchAreaMaterials Science-
dc.relation.journalResearchAreaPhysics-
dc.relation.journalWebOfScienceCategoryChemistry, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryNanoscience & Nanotechnology-
dc.relation.journalWebOfScienceCategoryMaterials Science, Multidisciplinary-
dc.relation.journalWebOfScienceCategoryPhysics, Applied-
dc.relation.journalWebOfScienceCategoryPhysics, Condensed Matter-
dc.subject.keywordPlusANALOG PERFORMANCE-
dc.subject.keywordPlusCHANNEL-
dc.subject.keywordPlusDEGRADATION-
dc.subject.keywordPlusLENGTH-
dc.subject.keywordAuthorFinFETs-
dc.subject.keywordAuthorFin Top Edge-
dc.subject.keywordAuthorEffective Channel-
dc.subject.keywordAuthorOn-Current Level-
dc.subject.keywordAuthorElectron Mobility-
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/jnn/2018/00000018/00000003/art00044-
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