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Effect of the Curved Fin Top Edge on the Electrical Characteristics of FinFETs
- Authors
- Ahn, Joonsung; Kim, Tae Whan
- Issue Date
- Mar-2018
- Publisher
- American Scientific Publishers
- Keywords
- FinFETs; Fin Top Edge; Effective Channel; On-Current Level; Electron Mobility
- Citation
- Journal of Nanoscience and Nanotechnology, v.18, no.3, pp 1837 - 1840
- Pages
- 4
- Indexed
- SCIE
- Journal Title
- Journal of Nanoscience and Nanotechnology
- Volume
- 18
- Number
- 3
- Start Page
- 1837
- End Page
- 1840
- ISSN
- 1533-4880
1533-4899
- Abstract
- The effect of the curved fin top edge on the electrical characteristics of FinFETs was investigated. The curvature radius of the fin top edge for the FinFETs was changed from 0 to 5 nm in order to determine the optimum condition of the electrical characteristics for the devices. The on-current level of the FinFETs with a curvature radius of 5 nm of fin top edge was 24.45% larger than that of the FinFETs with a cuboid fin. The electron current density and the electron mobility of the fin top edge for the FinFETs were larger than those for the FinFETs with a cuboid fin. The electrical characteristics of the FinFETs with a curvature radius of 5 nm for the fin top edge showed the best performance due to the largest expansion of the effective channel region.
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