Detailed Information
Cited 0 time in 
Cited 0 time in 
Cited 0 time in
Metadata Downloads
Rubrene thin-film transistors with crystalline channels achieved on optimally modified dielectric surface
- Authors
- Choi, Jeong-M.; Jeong, Seong Hun; Hwang, Do Kyung; Im, Seongil; Lee, Byoung H.; Sung, Myoung M.
- Issue Date
- Feb-2009
- Publisher
- Elsevier BV
- Keywords
- Organic thin-film transistor; Rubrene; Self-assembled-monolayer; Surface treatment on dielectrics
- Citation
- Organic Electronics, v.10, no.1, pp 199 - 204
- Pages
- 6
- Indexed
- SCIE
SCOPUS
- Journal Title
- Organic Electronics
- Volume
- 10
- Number
- 1
- Start Page
- 199
- End Page
- 204
- ISSN
- 1566-1199
1878-5530
- Abstract
- We report on the fabrication of rubrene thin-film transistors (TFTs) with surface-modified dielectrics adopting several kinds of self-assembled-monolayer (SAM) on SiO2/P+-Si substrate. With the dielectric of lower surface energy, the crystalline rubrene growth or amorphous-to-crystalline transformation kinetics is faster during in-situ vacuum post-annealing, which was performed after rubrene vacuum deposition. In the present study, hexamethyldisilazane (HMDS) was finally determined to be the most effective SAM inter-layer for polycrystalline rubrene channel formation. Our rubrene TFT with HMDS-coated SiO2 dielectric showed quite a high field mobility of similar to 10(-2) cm(2)/V s and a high on/off current ratio of similar to 10(5) under 40V.
- Files in This Item
- Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 화학과 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
Related Researcher
- Sung, Myung Mo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF CHEMISTRY)