Studies of defect states of ZnO thin films under different annealing conditions
- Authors
- Song, Hooyoung; Kim, Jae-Hoon; Kim, Eun Yu
- Issue Date
- Feb-2009
- Publisher
- ELSEVIER SCI LTD
- Keywords
- Defect states of ZnO; Annealing effect; Deep-level transient spectroscopy
- Citation
- MICROELECTRONICS JOURNAL, v.40, no.2, pp.313 - 315
- Indexed
- SCIE
SCOPUS
- Journal Title
- MICROELECTRONICS JOURNAL
- Volume
- 40
- Number
- 2
- Start Page
- 313
- End Page
- 315
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177285
- DOI
- 10.1016/j.mejo.2008.07.049
- ISSN
- 0026-2692
- Abstract
- ZnO thin films were grown by the pulsed laser deposition technique on c-plane sapphire substrates at a substrate temperature of 500 degrees C with 1 x 10(-4) Torr ambient gas. After the deposition process, ZnO thin films were annealed at 1000 degrees C for 5 min under N-2 or O-2 ambient gas, respectively. In the X-ray patterns, the (0 0 2) peak of the annealed sample was shifted from that of the as-grown sample, which indicates a reduced lattice constant of about 1%. Even though the X-ray diffraction patterns in the samples annealed under O-2 and N-2 annealing gases were almost the same, photoluminescence spectra showed the generation of a shallow level with a few meV, and deep-level states were generated at E-v+0.594 eV. In addition, a defect state appeared at E-c-0.607 eV, which originated from hydrogen plasma irradiation on the ZnO sample.
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