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Activation energies of the acceptor-bound excitons and the donor-acceptor pairs in nitrogen-doped p-type ZnSe, p-type ZnSySe1-y, and p-type Zn1-xMgxSySe1-y epitaxial films grown on GaAs (100) substrates
- Authors
- Kim, Hyuk Ju; Kim, Beong Ju; Kim, Tae Whan; Yoo, Keon Ho
- Issue Date
- Feb-2009
- Publisher
- Elsevier BV
- Keywords
- Activation energy; exciton; p-type ZnSe; p-type ZnSySe1-y; p-type Zn1-xMgxSySe1-y
- Citation
- Applied Surface Science, v.255, no.9, pp 5048 - 5051
- Pages
- 4
- Indexed
- SCIE
SCOPUS
- Journal Title
- Applied Surface Science
- Volume
- 255
- Number
- 9
- Start Page
- 5048
- End Page
- 5051
- ISSN
- 0169-4332
1873-5584
- Abstract
- Nitrogen-doped p-type ZnSe, p-type ZnSySe1 (y), and p-type Zn-1 xMgxSySe1 (y) epilayers were grown on n-type GaAs ( 1 0 0) substrates by molecular beam epitaxy. Photoluminescence (PL) spectra for the p-type ZnSe and the lattice-matched p-type ZnS0.06Se0.94, and p-type Zn0.92Mg0.08S0.12Se0.88 epilayers showed a deep acceptor bound exciton emission and a donor-acceptor pair emission. Temperature-dependent PL measurements were carried out to determine the activation energies of these states. The activation energies of the acceptor-bound excitons and the donor-acceptor pairs were determined to be 40 and 65 meV in the p-type ZnSe epilayer, 20 and 45 meV in the p-type ZnS0.06Se0.94, and 45 and 43 meV in the p-type Zn0.92Mg0.08S0.12Se0.88 epilayers.
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