Carrier transport mechanisms of bistable memory devices fabricated utilizing core-shell CdSe/ZnSe quantum-dot/multi-walled carbon nanotube hybrid nanocomposites
- Authors
- Li, Fushan; Son, Dong Ick; Kim, Tae Whan; Ryu, Euidock; Kim, Sang Wook
- Issue Date
- Feb-2009
- Publisher
- IOP PUBLISHING LTD
- Citation
- NANOTECHNOLOGY, v.20, no.8, pp.1 - 5
- Indexed
- SCIE
SCOPUS
- Journal Title
- NANOTECHNOLOGY
- Volume
- 20
- Number
- 8
- Start Page
- 1
- End Page
- 5
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177339
- DOI
- 10.1088/0957-4484/20/8/085202
- ISSN
- 0957-4484
- Abstract
- Transmission electron microscopy images showed that conjugation between single core-shell CdSe/ZnSe quantum dots (QDs) and oxidized multi-walled carbon nanotubes (MWCNTs) was achieved through the complexation reaction. Current-voltage (I-V) measurements on Al/CdSe: MWCNT conjugated nanocomposite/indium-tin-oxide devices at 300 K showed that the on/off ratio of the current bistability was as large as about 10(4), which was significantly increased due to an enhancement of the carrier transfer efficiency between the CdSe/ZnSe QDs and the MWCNTs. Carrier transport mechanisms of the bistable memory devices fabricated utilizing CdSe/ZnSe QD/MWCNT hybrid nanocomposite are described on the basis of the I-V results.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.