Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates
DC Field | Value | Language |
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dc.contributor.author | Gong, Su Cheol | - |
dc.contributor.author | Yoo, Byung Chul | - |
dc.contributor.author | Shin, Ik Sub | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.contributor.author | Park, Hyung-Ho | - |
dc.contributor.author | Chang, Ho Jung | - |
dc.date.accessioned | 2022-12-20T23:42:50Z | - |
dc.date.available | 2022-12-20T23:42:50Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2009-01 | - |
dc.identifier.issn | 0277-786X | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177362 | - |
dc.description.abstract | The flexible organic-inorganic thin film transistors (OITFTs) were fabricated with the structure of Al/ZnO/PVP/Al on PES (polyether sulfone) flexible substrate. PVP [poly-4-vinylphenol] organic gate insulator was coated on Al/PES film by the spin coating method. ZnO active channel layer was deposited on PVP/Si substrate by using atomic layer deposition (ALD) at various temperatures from 80 ~ 140 °C. The structural and electrical properties of ZnO films were analyzed by X-ray diffraction (XRD) and hall-effect measurement system. The carrier concentration and resistivity of ZnO film deposited at 100 °C were found to be about 1017 and 37.7 Ω·cm, respectively. The field effect mobility (μ) and threshold voltage (V TH) of the prepared OITFT were about 0.01 cm2/V·s and 12 V, respectively. The I on/off switching ratio was about 104. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | SPIE | - |
dc.title | Properties of organic-inorganic hybrid thin film transistors with zno active layer on pes substrates | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1117/12.808357 | - |
dc.identifier.scopusid | 2-s2.0-67649233472 | - |
dc.identifier.bibliographicCitation | Proceedings of SPIE - The International Society for Optical Engineering, v.7217, pp.1 - 6 | - |
dc.relation.isPartOf | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.title | Proceedings of SPIE - The International Society for Optical Engineering | - |
dc.citation.volume | 7217 | - |
dc.citation.startPage | 1 | - |
dc.citation.endPage | 6 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Atomic layer deposition (ALD) | - |
dc.subject.keywordPlus | Filed effect mobility | - |
dc.subject.keywordPlus | Flexible polyether sulfone (PES) | - |
dc.subject.keywordPlus | Organic-Inorganic Thin Film Transistor (OITFT) | - |
dc.subject.keywordPlus | PVP | - |
dc.subject.keywordPlus | ZnO | - |
dc.subject.keywordPlus | Atoms | - |
dc.subject.keywordPlus | Carrier concentration | - |
dc.subject.keywordPlus | Electric properties | - |
dc.subject.keywordPlus | Metallic films | - |
dc.subject.keywordPlus | Potential energy | - |
dc.subject.keywordPlus | Potential energy surfaces | - |
dc.subject.keywordPlus | Semiconducting zinc compounds | - |
dc.subject.keywordPlus | Substrates | - |
dc.subject.keywordPlus | Thin film transistors | - |
dc.subject.keywordPlus | Thin films | - |
dc.subject.keywordPlus | X ray diffraction | - |
dc.subject.keywordPlus | Zinc | - |
dc.subject.keywordPlus | Zinc oxide | - |
dc.subject.keywordPlus | Atomic layer deposition | - |
dc.subject.keywordAuthor | Atomic layer deposition (ALD) | - |
dc.subject.keywordAuthor | Filed effect mobility | - |
dc.subject.keywordAuthor | Flexible polyether sulfone (PES) | - |
dc.subject.keywordAuthor | Organic-Inorganic Thin Film Transistor (OITFT) | - |
dc.subject.keywordAuthor | PVP | - |
dc.subject.keywordAuthor | ZnO | - |
dc.identifier.url | https://www.spiedigitallibrary.org/conference-proceedings-of-spie/7217/1/Properties-of-organic-inorganic-hybrid-thin-film-transistors-with-ZnO/10.1117/12.808357.short?SSO=1 | - |
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