Effect of strain and nonparabolicity on interband transition energies of InAs/GaAs coupled double quantum dots
- Authors
- Kwon, Hye Young; Woo, Jun Taek; Lee, Dea Uk; Kim, Tae Whan; Park, Young Ju
- Issue Date
- Jan-2009
- Publisher
- PERGAMON-ELSEVIER SCIENCE LTD
- Keywords
- Nanostructures; Electronic states; Optical properties
- Citation
- SOLID STATE COMMUNICATIONS, v.149, no.1-2, pp.52 - 55
- Indexed
- SCIE
SCOPUS
- Journal Title
- SOLID STATE COMMUNICATIONS
- Volume
- 149
- Number
- 1-2
- Start Page
- 52
- End Page
- 55
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177378
- DOI
- 10.1016/j.ssc.2008.10.013
- ISSN
- 0038-1098
- Abstract
- Strained potential profiles and electronic subband energies of InAs/GaAs coupled double quantum dots (DQDs) were calculated by using a three-dimensional finite-difference method (FDM) taking into account shape-based strain and nonparabolic effects. The interband transition energies from the ground electronic subband to the ground heavy-hole band (E-1-HH1) in the InAs/GaAs DQDs, as determined from the FDM calculations taking into account strain and nonparabolic effects, were in reasonable agreement with the experimental peaks corresponding to the (E-1-HH1) interband transition energies at several temperatures, as determined from the temperature-dependent photoluminescence spectra.
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