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Characterization of an AlOx Tunneling Barrier in a Magnetic Tunnel Junction by a Surface Plasmon Resonance Spectroscopy Technique
- Issue Date
- Jan-2009
- Publisher
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
- Keywords
- Magnetic random access memory; magnetoresistance; temperature measurement; tunneling
- Citation
- IEEE TRANSACTIONS ON MAGNETICS, v.45, no.1, pp.60 - 63
- Indexed
- SCIE
SCOPUS
- Journal Title
- IEEE TRANSACTIONS ON MAGNETICS
- Volume
- 45
- Number
- 1
- Start Page
- 60
- End Page
- 63
- ISSN
- 0018-9464
- Abstract
- We measured tunneling magnetoresistance (TMR) in a magnetic tunnel junction as a function of temperature. We used surface plasmon resonance spectroscopy (SPRS) one of the most useful tools in the analysis of dielectric function in a thin tunneling barrier-to study the correlation of AlOx barrier quality with the temperature dependent behavior of the TMR ratio. The experimental SPRS analysis suggests that the decrease of the TMR ratio starting at 150 K is caused by residual Al metallic defects distributed within the insulating AlOx barrier. We checked this result by measuring the junction resistances in parallel and antiparallel states.
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Related Researcher
- Hong, Jin Pyo
- COLLEGE OF NATURAL SCIENCES (DEPARTMENT OF PHYSICS)