Characteristics of Simultaneous Studies of Both Undoped and p-type GaN Implanted with Mn+ (5 and 10 at.%)

Abstract

GaMnN and GaMnN:Mg layers were prepared using implantation of 5 and 10 at.% Mn ions into undoped GaN and p-type GaN:Mg, respectively. Both samples revealed that two precipitate phases, Ga5.2Mn and Mu(3)Ga, coexist with the crystalline phase GaMnN. The ferromagnetic transition showed two kinds of behaviors; i.e., a rapid transition from GaMnN at lower temperatures (75 similar to 100 K) and a released transition from Ga5.2Mn and Mn3Ga at higher temperatures (above 300 K). The T-C of GaMnN for Mg-codoped GaMnN (similar to 100 K) was observed to be higher than that for undoped GaMnN (similar to 75 K).