Solution-Processed n-Type Graphene Doping for Cathode in Inverted Polymer Light-Emitting Diodesopen access
- Authors
- Kwon, Sung-Joo; Han, Tae Hee; Kim, Young-Hoon; Ahmed, Towfiq; Seo, Hong-Kyu; Kim, Hobeom; Kim, Dong Jin; Xu, Wentao; Hong, Byung Hee; Zhu, Jian-Xin; Lee, Tae-Woo
- Issue Date
- Feb-2018
- Publisher
- AMER CHEMICAL SOC
- Keywords
- CVD graphene; chemical n-doping; transparent electrode; DFT calculation; PLED
- Citation
- ACS APPLIED MATERIALS & INTERFACES, v.10, no.5, pp.4874 - 4881
- Indexed
- SCIE
SCOPUS
- Journal Title
- ACS APPLIED MATERIALS & INTERFACES
- Volume
- 10
- Number
- 5
- Start Page
- 4874
- End Page
- 4881
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17770
- DOI
- 10.1021/acsami.7b15307
- ISSN
- 1944-8244
- Abstract
- n-Type doping with (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl) dimethylamine (N-DMBI) reduces a work function (WF) of graphene by similar to 0.45 eV without significant reduction of optical transmittance. Solution process of N-DMBI on graphene provides effective n-type doping effect and air-stability at the same time. Although neutral N-DMBI act as an electron receptor leaving the graphene p-doped, radical N-DMBI acts as an electron donator leaving the graphene n-doped, which is demonstrated by density functional theory. We also verify the suitability of N-DMBI-doped n-type graphene for use as a cathode in inverted polymer light-emitting diodes (PLEDs) by using various analytical methods. Inverted PLEDs using a graphene cathode doped with N-DMBI radical showed dramatically improved device efficiency (similar to 3.8 cd/A) than did inverted PLEDs with pristine graphene (similar to 2.74 cd/A). N-DMBI-doped graphene can provide a practical way to produce graphene cathodes with low WF in various organic optoelectronics.
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