Experimental Evidence of a Charging Channel of CoSi2 Nanopaticles in Thin Oxide Barrier Structures
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, JunSeok | - |
dc.contributor.author | Hong, JinPyo | - |
dc.contributor.author | Kim, JooHyung | - |
dc.contributor.author | Yang, JungYup | - |
dc.contributor.author | Park, Kyung-Hoon | - |
dc.contributor.author | Cho, Seong-Guk | - |
dc.contributor.author | Nahm, Tschang-Uh | - |
dc.date.accessioned | 2022-12-21T00:30:30Z | - |
dc.date.available | 2022-12-21T00:30:30Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-11 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177711 | - |
dc.description.abstract | We examined discrete charging properties Of CoSi2 nanoparticles (NPs) embedded in thin SiO2 tunneling and control oxide layers as a first step toward novel NP devices. CoSi2 NPs were prepared without a post-annealing process by exposure Of Co/Si/CoSi2 tunneling oxide/Si stacks to an external UV laser. The thicknesses of the Co and the Si layers were intentionally controlled to obtain ideal CoSi2 NPs. The measurements from X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy clearly exhibited the formation of CoSi2. These CoSi2 NPs covered by metal oxide semiconductor devices revealed a charging or discharging window of 3.2 V under +9 V/-9 V in capacitance-voltage curves with good retention and endurance times. Therefore, it is found that silicide NPs could also play a decisive role in the development of new functional NP applications. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Experimental Evidence of a Charging Channel of CoSi2 Nanopaticles in Thin Oxide Barrier Structures | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Hong, JinPyo | - |
dc.contributor.affiliatedAuthor | Nahm, Tschang-Uh | - |
dc.identifier.doi | 10.3938/jkps.53.2696 | - |
dc.identifier.scopusid | 2-s2.0-57349120802 | - |
dc.identifier.wosid | 000260935000070 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2696 - 2699 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 5 | - |
dc.citation.startPage | 2696 | - |
dc.citation.endPage | 2699 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001469856 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordAuthor | Silicide nanoparticles | - |
dc.subject.keywordAuthor | Non-volatile memory | - |
dc.subject.keywordAuthor | Nano floating gate memory | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=53&number=9(5)&spage=2696&year=2008 | - |
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