Experimental Evidence of a Charging Channel of CoSi2 Nanopaticles in Thin Oxide Barrier Structures
- Authors
- Lee, JunSeok; Hong, JinPyo; Kim, JooHyung; Yang, JungYup; Park, Kyung-Hoon; Cho, Seong-Guk; Nahm, Tschang-Uh
- Issue Date
- Nov-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- Silicide nanoparticles; Non-volatile memory; Nano floating gate memory
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2696 - 2699
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 5
- Start Page
- 2696
- End Page
- 2699
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177711
- DOI
- 10.3938/jkps.53.2696
- ISSN
- 0374-4884
- Abstract
- We examined discrete charging properties Of CoSi2 nanoparticles (NPs) embedded in thin SiO2 tunneling and control oxide layers as a first step toward novel NP devices. CoSi2 NPs were prepared without a post-annealing process by exposure Of Co/Si/CoSi2 tunneling oxide/Si stacks to an external UV laser. The thicknesses of the Co and the Si layers were intentionally controlled to obtain ideal CoSi2 NPs. The measurements from X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy clearly exhibited the formation of CoSi2. These CoSi2 NPs covered by metal oxide semiconductor devices revealed a charging or discharging window of 3.2 V under +9 V/-9 V in capacitance-voltage curves with good retention and endurance times. Therefore, it is found that silicide NPs could also play a decisive role in the development of new functional NP applications.
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