Thermal-Annealing Effect of InP:Zn Implanted with Magnetic Impurities

Abstract

Thermal-annealing effects of p-type InMnP:Zn samples were studied by using electrical measurements such as capacitance-voltage (C-V) and deep-level transient spectroscopy (DLTS). The annealing process was used to improve the properties of the InMnP and the annealing temperatures were 450, 550 and 600 degrees C. From the results, we confirmed that the Mn-ion implantation process caused crystal defects in the InP and that a thermal annealing process at a proper temperature could recover the crystallinity and annihilate the defects. Five DLTS signals were found in the 600 degrees C annealed sample. In these, the origins of two signals were considered to be Mn-state and Mn-related clusters and their activation energies were 0.30 and 0.71 eV, respectively. Comparing the magnetic properties and the DLTS results, we found the good magnetic properties of the InMnP to be closely related to Mn-related levels and that these could be improved by thermal annealing.