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Study of Defects on Zn0.95Mn0.05O by Using Deep Level Transient Spectroscopy

Authors
Kim, Jae-HoonSong, HooyoungKim, Eun KyuKim, Young DongChu, Hong
Issue Date
Nov-2008
Publisher
KOREAN PHYSICAL SOC
Keywords
ZnO; ZnMnO; Diluted magnetic semiconductor; Deep level transient spectroscopy
Citation
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.5, pp.2374 - 2377
Indexed
SCIE
SCOPUS
KCI
Journal Title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
Volume
53
Number
5
Start Page
2374
End Page
2377
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177719
DOI
10.3938/jkps.53.2374
ISSN
0374-4884
Abstract
Defect states are important to the characteristics of diluted magnetic semiconductor materials. In this study, the electrical activation energies of the defects of Zn0.95Mn0.05O were analyzed by using deep level transient spectroscopy (DLTS). The Zn0.95Mn0.05O films had been deposited with growth temperature modulation by using a pulsed laser deposition method with a mixture target. In the films grown at 450 degrees C, the carrier concentration was about 1 x 10(16) cm(-3) based on the carrier profile of the capacitance-voltage measurement. X-ray diffraction showed a ZnO based Wurtzite structure. The DLTS signals appeaxing in the ZnMnO have an activation energy of 0.13 eV and are thougth to be due to defects originating from Mn-related site. The oxygen vacancy defect was also observed in the DLTS spectra.
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