Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N-2 and N2O Plasma Post-Treatments
DC Field | Value | Language |
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dc.contributor.author | Kim, Hyungchul | - |
dc.contributor.author | Kim, Seokhoon | - |
dc.contributor.author | Woo, Sanghyun | - |
dc.contributor.author | Chung, Hye Yeong | - |
dc.contributor.author | Kim, Honggyu | - |
dc.contributor.author | Park, Jongsan | - |
dc.contributor.author | Jeon, Hyeongtag | - |
dc.date.accessioned | 2022-12-21T00:59:03Z | - |
dc.date.available | 2022-12-21T00:59:03Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0013-4651 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177823 | - |
dc.description.abstract | We investigated the thermal stability and physical properties of nitrided Hf-silicate after applying N-2 and N2O plasma treatments. The Hf-silicate film was created by remote-plasma atomic layer deposition using Hf[N(CH3)C2H5](4) and Si[N(CH3)](3)H as source gases and O-2 plasma as the oxidant. After rapid thermal annealing in N-2 ambient, the Hf silicate crystallized at 800 degrees C, while Hf-silicate films after the N-2 and N2O plasma treatments remained amorphous after annealing at 800 degrees C. Remote-plasma treatment of Hf-silicate resulted in a shift of the O 1s peaks to a lower binding energy. The increase in peak intensities of the Si-O-N, Si-O-Hf, and Si-O bonds at the interface after annealing was higher after N2O plasma treatment than after N-2 plasma treatment. The accumulation capacitances of an as-grown Hf-silicate metal-oxide-semiconductor structure after N-2 plasma treatment show that it has a better capacitance density (280 pF) than the same structure after N2O plasma treatment (235 pF). The equivalent oxide thickness values for the Hf-silicate films after N-2 and N2O plasma treatments are 3.36 and 3.8 nm, respectively. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELECTROCHEMICAL SOC INC | - |
dc.title | Characteristics of Thin Hf-Silicate Gate Dielectrics after Remote N-2 and N2O Plasma Post-Treatments | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Jeon, Hyeongtag | - |
dc.identifier.doi | 10.1149/1.2990702 | - |
dc.identifier.scopusid | 2-s2.0-54949085474 | - |
dc.identifier.wosid | 000260479700066 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v.155, no.12, pp.G299 - G303 | - |
dc.relation.isPartOf | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE ELECTROCHEMICAL SOCIETY | - |
dc.citation.volume | 155 | - |
dc.citation.number | 12 | - |
dc.citation.startPage | G299 | - |
dc.citation.endPage | G303 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Electrochemistry | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Electrochemistry | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Coatings & Films | - |
dc.subject.keywordPlus | ELECTRICAL-PROPERTIES | - |
dc.subject.keywordPlus | THERMAL-STABILITY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | LAYER | - |
dc.subject.keywordPlus | NITROGEN | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1149/1.2990702 | - |
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