Optimization of the Fabrication Process of InSb Schottky Diodes

Abstract

Compound semiconductors with small band gap, such as InSb or InAs, can be candidate materials for an ultra-high-resolution radiation detector. An InSb Schottky diode was developed and the dependency of detector performance on the size of the contact electrode, the chemical etching method, the operating temperature and the passivation method was studied. By comparing the I-V curves of InSb diodes made with various processes, we were able to optimize the fabrication process of the InSb diode. The leakage current of the InSb diode could be reduced significantly clue to a blocking metal-semiconductor contact and surface passivation and the diode could be applied to high-resolution radiation measurements.