Optimization of the Fabrication Process of InSb Schottky Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Se-Hwan | - |
dc.contributor.author | Song, Tae-young | - |
dc.contributor.author | Kim, Han-Soo | - |
dc.contributor.author | Ha, Jang Ho | - |
dc.contributor.author | Kim, Yong Kyun | - |
dc.date.accessioned | 2022-12-21T01:07:31Z | - |
dc.date.available | 2022-12-21T01:07:31Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-10 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177840 | - |
dc.description.abstract | Compound semiconductors with small band gap, such as InSb or InAs, can be candidate materials for an ultra-high-resolution radiation detector. An InSb Schottky diode was developed and the dependency of detector performance on the size of the contact electrode, the chemical etching method, the operating temperature and the passivation method was studied. By comparing the I-V curves of InSb diodes made with various processes, we were able to optimize the fabrication process of the InSb diode. The leakage current of the InSb diode could be reduced significantly clue to a blocking metal-semiconductor contact and surface passivation and the diode could be applied to high-resolution radiation measurements. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Optimization of the Fabrication Process of InSb Schottky Diodes | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Yong Kyun | - |
dc.identifier.doi | 10.3938/jkps.53.1854 | - |
dc.identifier.scopusid | 2-s2.0-55949118726 | - |
dc.identifier.wosid | 000260100400015 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.4, pp.1854 - 1858 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 4 | - |
dc.citation.startPage | 1854 | - |
dc.citation.endPage | 1858 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.identifier.kciid | ART001470308 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | RADIATION DETECTORS | - |
dc.subject.keywordPlus | CRYOGENIC DETECTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordAuthor | InSb | - |
dc.subject.keywordAuthor | InAs | - |
dc.subject.keywordAuthor | Schottky diode | - |
dc.subject.keywordAuthor | Leakage current | - |
dc.subject.keywordAuthor | Surface passivation | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=53&number=4&spage=1854&year=2008 | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.