Dislocation related defect states in GaN irradiated with 1 MeV electron-beam

Abstract

Undoped GaN layers with thickness of 278 μm were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0×106 cm-2 and 7.2×106 cm-2 were irradiated by electron-beam with the energy of 1 MeV and dose of 1×1015 cm-2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 eV.