Dislocation related defect states in GaN irradiated with 1 MeV electron-beam
- Authors
- Lee, Dong Uk; Ha, Lim-Kyoung; Kim, Jin Soak; Kim, Eun Kyu; Koh, Eui Kwan; Han, Il Ki
- Issue Date
- Sep-2008
- Publisher
- Wiley-VCH Verlag GmbH & Co. KGaA
- Citation
- Physica Status Solidi (C) Current Topics in Solid State Physics, v.5, no.6, pp.1630 - 1632
- Indexed
- SCOPUS
- Journal Title
- Physica Status Solidi (C) Current Topics in Solid State Physics
- Volume
- 5
- Number
- 6
- Start Page
- 1630
- End Page
- 1632
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177932
- DOI
- 10.1002/pssc.200778552
- ISSN
- 1862-6351
- Abstract
- Undoped GaN layers with thickness of 278 μm were grown by hydride vapor phase epitaxy method. The samples with different threading dislocation densities of 9.0×106 cm-2 and 7.2×106 cm-2 were irradiated by electron-beam with the energy of 1 MeV and dose of 1×1015 cm-2. The defect states of the samples after electron beam irradiation were characterized by deep level transient spectroscopy measurement. After the electron-beam irradiation, the the defects appeared to states with the activation energies of 0.61 eV, 0.30 eV, and 0.57 eV.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177932)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.