Charging effect of a nano-floating gate capacitor with double-layered Au nano-particles
DC Field | Value | Language |
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dc.contributor.author | Lee, Dong Uk | - |
dc.contributor.author | Lee, Min Seung | - |
dc.contributor.author | Lee, Tae Hee | - |
dc.contributor.author | Kim, Eun Kyu | - |
dc.contributor.author | Kim, Won Mok | - |
dc.date.accessioned | 2022-12-21T01:30:18Z | - |
dc.date.available | 2022-12-21T01:30:18Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-09 | - |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177981 | - |
dc.description.abstract | A nano-floating gate capacitor with double-layered An nano-particles embedded in a SiO1.3N layer was fabricated and characterized. The Au nano-particles were formed from An thin film with a nominal thickness of 1 nm and their average size and density were about 4 nm and 2 x 1012 cm(-2), respectively. After the post-annealing process at 800 degrees C for 10 s, the flat-band voltage shift of the nano-floating gate capacitor with double-layered An nano-particles was about 9 V when the applied gate voltage was swept from -10 V to +10 V. Significantly, the flat-band voltage shifts were improved after the post-annealing process. The double-layered An nano-particles embedded in a SiO1.3N dielectric showed feasibility as nano-floating gate capacitors for nonvolatile memories. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | KOREAN PHYSICAL SOC | - |
dc.title | Charging effect of a nano-floating gate capacitor with double-layered Au nano-particles | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Eun Kyu | - |
dc.identifier.doi | 10.3938/jkps.53.1484 | - |
dc.identifier.scopusid | 2-s2.0-53549117994 | - |
dc.identifier.wosid | 000259194800037 | - |
dc.identifier.bibliographicCitation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.3, pp.1484 - 1487 | - |
dc.relation.isPartOf | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.title | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.citation.volume | 53 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1484 | - |
dc.citation.endPage | 1487 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.identifier.kciid | ART001472554 | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.description.journalRegisteredClass | kci | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Multidisciplinary | - |
dc.subject.keywordPlus | ELECTRICAL CHARACTERIZATION | - |
dc.subject.keywordPlus | NANOCRYSTALS | - |
dc.subject.keywordPlus | MEMORY | - |
dc.subject.keywordAuthor | nano-particles | - |
dc.subject.keywordAuthor | SiON | - |
dc.subject.keywordAuthor | Au | - |
dc.subject.keywordAuthor | nano-floating gate memory | - |
dc.identifier.url | https://www.jkps.or.kr/journal/view.html?volume=53&number=3&spage=1484&year=2008 | - |
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