Charging effect of a nano-floating gate capacitor with double-layered Au nano-particles
- Authors
- Lee, Dong Uk; Lee, Min Seung; Lee, Tae Hee; Kim, Eun Kyu; Kim, Won Mok
- Issue Date
- Sep-2008
- Publisher
- KOREAN PHYSICAL SOC
- Keywords
- nano-particles; SiON; Au; nano-floating gate memory
- Citation
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v.53, no.3, pp.1484 - 1487
- Indexed
- SCIE
SCOPUS
KCI
- Journal Title
- JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Volume
- 53
- Number
- 3
- Start Page
- 1484
- End Page
- 1487
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177981
- DOI
- 10.3938/jkps.53.1484
- ISSN
- 0374-4884
- Abstract
- A nano-floating gate capacitor with double-layered An nano-particles embedded in a SiO1.3N layer was fabricated and characterized. The Au nano-particles were formed from An thin film with a nominal thickness of 1 nm and their average size and density were about 4 nm and 2 x 1012 cm(-2), respectively. After the post-annealing process at 800 degrees C for 10 s, the flat-band voltage shift of the nano-floating gate capacitor with double-layered An nano-particles was about 9 V when the applied gate voltage was swept from -10 V to +10 V. Significantly, the flat-band voltage shifts were improved after the post-annealing process. The double-layered An nano-particles embedded in a SiO1.3N dielectric showed feasibility as nano-floating gate capacitors for nonvolatile memories.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 자연과학대학 > 서울 물리학과 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/177981)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.