Effect of O-2 Gas during Inductively Coupled O-2/Cl-2 Plasma Etching of Mo and HfO2 for Gate Stack Patterning
DC Field | Value | Language |
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dc.contributor.author | Jung, Ho Young | - |
dc.contributor.author | Lee, Hag Joo | - |
dc.contributor.author | Kwon, Bong Soo | - |
dc.contributor.author | Park, Jung Ho | - |
dc.contributor.author | Lee, Chiyoung | - |
dc.contributor.author | Ahn, Jinho | - |
dc.contributor.author | Lee, Jaegab | - |
dc.contributor.author | Lee, Nae-Eung | - |
dc.date.accessioned | 2022-12-21T01:47:26Z | - |
dc.date.available | 2022-12-21T01:47:26Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178092 | - |
dc.description.abstract | In this study, we investigated the etching characteristics of Mo and HfO2 single layers and Mo/HfO2 stacked structure for metal electrode/high-k gate stack patterning in O-2-/Cl-2 inductively coupled plasmas and the effects of O-2 addition on the etch rates and etch selectivity of the Mo to the HfO2 layer. By controlling the process parameters such as the O-2/Cl-2 flow ratio, the top electrode power and the do self-bias voltage (V-dc), the Mo/HfO2 etch selectivity as high as congruent to 67 could be obtained. Addition of O-2 gas to the O-2/Cl-2 chemistry improved the Mo/HfO2 etch selectivity because the O-2 gas in a certain flow ratio range reduced the HfO, etching reactions due to less chlorination of Hf but enhanced the Mo etch rate presumably due to effective formation of highly volatile Mo-O-Cl etch by-products. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | JAPAN SOC APPLIED PHYSICS | - |
dc.title | Effect of O-2 Gas during Inductively Coupled O-2/Cl-2 Plasma Etching of Mo and HfO2 for Gate Stack Patterning | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Ahn, Jinho | - |
dc.identifier.doi | 10.1143/JJAP.47.6938 | - |
dc.identifier.scopusid | 2-s2.0-55149089274 | - |
dc.identifier.wosid | 000260003200024 | - |
dc.identifier.bibliographicCitation | JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.8, pp.6938 - 6942 | - |
dc.relation.isPartOf | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.title | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.citation.volume | 47 | - |
dc.citation.number | 8 | - |
dc.citation.startPage | 6938 | - |
dc.citation.endPage | 6942 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Physics | - |
dc.relation.journalWebOfScienceCategory | Physics, Applied | - |
dc.subject.keywordPlus | METAL GATE | - |
dc.subject.keywordPlus | INTEGRATION | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | TECHNOLOGY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | REPLACEMENT | - |
dc.subject.keywordPlus | DIELECTRICS | - |
dc.subject.keywordPlus | MOLYBDENUM | - |
dc.subject.keywordPlus | ELECTRODE | - |
dc.subject.keywordPlus | ISSUES | - |
dc.subject.keywordAuthor | Mo | - |
dc.subject.keywordAuthor | HfO2 | - |
dc.subject.keywordAuthor | plasma etching | - |
dc.subject.keywordAuthor | inductively coupled plasma (ICP) | - |
dc.subject.keywordAuthor | metal gate stack | - |
dc.identifier.url | https://iopscience.iop.org/article/10.1143/JJAP.47.6938 | - |
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