Detailed Information

Cited 0 time in webofscience Cited 0 time in scopus
Metadata Downloads

High-Speed Programming Not-OR Flash Memory Cells With Titanium Disilicide Drain

Authors
Kim, Kyeong-RokDal Kwack, KaeKim, Tae Whan
Issue Date
Aug-2008
Publisher
IOP PUBLISHING LTD
Keywords
NOR flash memory; high-speed program; silidation; titanium disilicide drain
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.8, pp.6262 - 6265
Indexed
SCIE
SCOPUS
Journal Title
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume
47
Number
8
Start Page
6262
End Page
6265
URI
https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178095
DOI
10.1143/JJAP.47.6262
ISSN
0021-4922
Abstract
A Not-OR (NOR) flash memory cell using a titanium disilicide (TiSi2) drain was designed to increase programming speed and driving current. This NOR flash memory cell with a TiSi2 drain was proposed on the basis of the fundamental structure of conventional NOR flash memory cells with a length of 90nm. The programming speed and driving current of the NOR flash memory cell with a TiSi2 drain were simulated using T-SUPREM4 and MEDICI. The simulation results showed that the heavily doped carriers existing in the TiSi2 drain can be used to increase the programming speed of the NOR flash memory cell and that a decrease in source/drain series resistance utilizing the silicide in the NOR flash memory cell with a TiSi2 drain helps increase driving current density.
Files in This Item
Go to Link
Appears in
Collections
서울 공과대학 > 서울 융합전자공학부 > 1. Journal Articles

qrcode

Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.

Altmetrics

Total Views & Downloads

BROWSE