A study on the thermoelectric properties of ALD-grown aluminum-doped tin oxide with respect to nanostructure modulations
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lee, Seung-Hwan | - |
dc.contributor.author | Choi, Jin-Myung | - |
dc.contributor.author | Lim, Jae-Hong | - |
dc.contributor.author | Park, Jozeph | - |
dc.contributor.author | Park, Jin-Seong | - |
dc.date.accessioned | 2021-08-02T13:53:14Z | - |
dc.date.available | 2021-08-02T13:53:14Z | - |
dc.date.created | 2021-05-12 | - |
dc.date.issued | 2018-02 | - |
dc.identifier.issn | 0272-8842 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17809 | - |
dc.description.abstract | The thermoelectric properties of aluminum-doped tin oxide (ATO) thin films synthesized by thermal atomic layer deposition (ALD) were studied with respect to the aluminum concentration. The overall aluminum content in each layer was modulated by adjusting the relative number of tin oxide (SnO2) and aluminum oxide (Al2O3) growth cycles, where a sequential process involving n cycles of SnO2 growth followed by 1 cycle of Al2O3 deposition was performed (building up a super-cycle). The electrical conductivity (620 S/cm), free carrier concentration (1.23x10(21) cm(-3)), and power factor (0.49 mW/K(2)m) increase until their maximum values are reached when the Al content is approximately 1.50 at% of the cations, and decrease as more Al is added in. On the other hand, the Seebeck coefficient decreases monotonically as the Al content increases up to about 2.88 at %, and begins to increase with further Al doping. Here the thermoelectric efficiency is therefore determined primarily by the free carrier concentration, while the Seebeck coefficient appears to be influenced by the overall crystal structure. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | ELSEVIER SCI LTD | - |
dc.title | A study on the thermoelectric properties of ALD-grown aluminum-doped tin oxide with respect to nanostructure modulations | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jin-Seong | - |
dc.identifier.doi | 10.1016/j.ceramint.2017.10.141 | - |
dc.identifier.scopusid | 2-s2.0-85032814184 | - |
dc.identifier.wosid | 000418211600100 | - |
dc.identifier.bibliographicCitation | CERAMICS INTERNATIONAL, v.44, no.2, pp.1978 - 1983 | - |
dc.relation.isPartOf | CERAMICS INTERNATIONAL | - |
dc.citation.title | CERAMICS INTERNATIONAL | - |
dc.citation.volume | 44 | - |
dc.citation.number | 2 | - |
dc.citation.startPage | 1978 | - |
dc.citation.endPage | 1983 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Materials Science | - |
dc.relation.journalWebOfScienceCategory | Materials Science, Ceramics | - |
dc.subject.keywordPlus | ZINC-OXIDE | - |
dc.subject.keywordPlus | PHYSICAL-PROPERTIES | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | SNO2 FILMS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | CONDUCTIVITY | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | INVERSION | - |
dc.subject.keywordPlus | TELLURIDE | - |
dc.subject.keywordPlus | ROUTE | - |
dc.subject.keywordAuthor | Aluminum doped tin oxide | - |
dc.subject.keywordAuthor | Atomic layer deposition | - |
dc.subject.keywordAuthor | Thermoelectric material | - |
dc.subject.keywordAuthor | Seebeck | - |
dc.subject.keywordAuthor | Power factor | - |
dc.identifier.url | https://www.sciencedirect.com/science/article/pii/S0272884217323453?via%3Dihub | - |
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.
222, Wangsimni-ro, Seongdong-gu, Seoul, 04763, Korea+82-2-2220-1365
COPYRIGHT © 2021 HANYANG UNIVERSITY.
Certain data included herein are derived from the © Web of Science of Clarivate Analytics. All rights reserved.
You may not copy or re-distribute this material in whole or in part without the prior written consent of Clarivate Analytics.