LRU-WSR: Integration of LRU and writes sequence reordering for flash memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jung, Hoyoung | - |
dc.contributor.author | Shim, Hyoki | - |
dc.contributor.author | Park, Sungmin | - |
dc.contributor.author | Kang, Sooyong | - |
dc.contributor.author | Cha, Jaehyuk | - |
dc.date.accessioned | 2022-12-21T01:48:34Z | - |
dc.date.available | 2022-12-21T01:48:34Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-08 | - |
dc.identifier.issn | 0098-3063 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178102 | - |
dc.description.abstract | Most mobile devices are equipped with a NAND flash memory even if it has characteristics of not-in-place update and asymmetric I/O latencies among read, write, and erase operations: write/erase operations are much slower than a read operation in a flash memory. For the overall performance of a flash memory system, the buffer replacement policy should consider the above severely asymmetric I/O latencies. However, existing LRU buffer replacement algorithm cannot deal with the above problem. This paper proposes the LRU-WSR buffer replacement algorithm that enhances LRU by reordering writes of not-cold dirty pages from the buffer cache to flash storage. The enhanced LRU- WSR algorithm focuses on reducing the number of write/erase operations as well as preventing serious degradation of buffer hit ratio. The experimental results show that the LRU-WSR outperforms other algorithms including LRU, CF-LRU, and FAB(1). | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC | - |
dc.title | LRU-WSR: Integration of LRU and writes sequence reordering for flash memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kang, Sooyong | - |
dc.contributor.affiliatedAuthor | Cha, Jaehyuk | - |
dc.identifier.doi | 10.1109/TCE.2008.4637609 | - |
dc.identifier.scopusid | 2-s2.0-54349109403 | - |
dc.identifier.wosid | 000259367300038 | - |
dc.identifier.bibliographicCitation | IEEE TRANSACTIONS ON CONSUMER ELECTRONICS, v.54, no.3, pp.1215 - 1223 | - |
dc.relation.isPartOf | IEEE TRANSACTIONS ON CONSUMER ELECTRONICS | - |
dc.citation.title | IEEE TRANSACTIONS ON CONSUMER ELECTRONICS | - |
dc.citation.volume | 54 | - |
dc.citation.number | 3 | - |
dc.citation.startPage | 1215 | - |
dc.citation.endPage | 1223 | - |
dc.type.rims | ART | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Engineering | - |
dc.relation.journalResearchArea | Telecommunications | - |
dc.relation.journalWebOfScienceCategory | Engineering, Electrical & Electronic | - |
dc.relation.journalWebOfScienceCategory | Telecommunications | - |
dc.subject.keywordPlus | Boolean functions | - |
dc.subject.keywordPlus | Buffer storage | - |
dc.subject.keywordPlus | Data storage equipment | - |
dc.subject.keywordPlus | Mobile devices | - |
dc.subject.keywordPlus | Telecommunication equipment | - |
dc.subject.keywordAuthor | flash memory | - |
dc.subject.keywordAuthor | buffer replacement | - |
dc.subject.keywordAuthor | storage system | - |
dc.identifier.url | https://ieeexplore.ieee.org/document/4637609 | - |
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