Process optimization of Ni nanocrystals formation using O2 plasma oxidation to fabricate low-molecular organic nonvolatile memory
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Nam, Woo Sik | - |
dc.contributor.author | Lee, Gon-Sub | - |
dc.contributor.author | Seo, Sung Ho | - |
dc.contributor.author | Park, Jea Gun | - |
dc.date.accessioned | 2022-12-21T01:53:20Z | - |
dc.date.available | 2022-12-21T01:53:20Z | - |
dc.date.created | 2022-09-16 | - |
dc.date.issued | 2008-07 | - |
dc.identifier.issn | 0272-9172 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178148 | - |
dc.description.abstract | We fabricated organic nonvolatile memory with a device structure of Al/Alq3 (aluminum tris (8-hydroxyquinoline))/Ni nanocrystals surrounded by NiO/Alq3/Al. We obtained the best bistable switching characteristics at a 30-nm Alq3 thickness, 0.1-?/sec evaporation rate, and 10-nm Ni nanocrystal layer thickness. The electrical behavior of the bistable switching devices was obtained by sweeping the voltage from 0 to 10 V. Our devices showed excellent bistable memory characteristics, such as a Vth of 2 V, Vp of 3 V, Ve of 5 V, and Ion/Ioff ratio of greater than 104. We found that a region of negative differential resistance exists between Vp and Ve. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | Materials Research Society | - |
dc.title | Process optimization of Ni nanocrystals formation using O2 plasma oxidation to fabricate low-molecular organic nonvolatile memory | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Park, Jea Gun | - |
dc.identifier.doi | 10.1557/proc-1071-f05-21 | - |
dc.identifier.scopusid | 2-s2.0-55849096911 | - |
dc.identifier.bibliographicCitation | Materials Research Society Symposium Proceedings, v.1071, pp.147 - 152 | - |
dc.relation.isPartOf | Materials Research Society Symposium Proceedings | - |
dc.citation.title | Materials Research Society Symposium Proceedings | - |
dc.citation.volume | 1071 | - |
dc.citation.startPage | 147 | - |
dc.citation.endPage | 152 | - |
dc.type.rims | ART | - |
dc.type.docType | Conference Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scopus | - |
dc.subject.keywordPlus | Fabrication | - |
dc.subject.keywordPlus | Nickel oxide | - |
dc.subject.keywordPlus | Nonvolatile storage | - |
dc.subject.keywordPlus | Optimization | - |
dc.subject.keywordPlus | Aluminum tris(8-hydroxyquinoline) (Alq3) | - |
dc.subject.keywordPlus | Bistable memory | - |
dc.subject.keywordPlus | Bistable switching | - |
dc.subject.keywordPlus | Electrical behaviors | - |
dc.subject.keywordPlus | Evaporation rate | - |
dc.subject.keywordPlus | Negative differential resistances | - |
dc.subject.keywordPlus | Organic nonvolatile memory | - |
dc.subject.keywordPlus | Plasma oxidation | - |
dc.subject.keywordPlus | Nanocrystals | - |
dc.identifier.url | https://link.springer.com/article/10.1557/PROC-1071-F05-21 | - |
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