Condensation mechanism for the formation of relaxed SiGe layer grown-on-insulator

Abstract

The use of the condensation method to grow a relaxed SiGe layer-on-insulator (ε-SGOI) for making high-speed complementary metal-oxide-semiconductor field-effect transistors (C-MOSFETs) has attracted interest because of its high quality and cost effectiveness. Many reports have presented its superiority in a device performance to bonding and dislocation sink technologies. However, in case of the condensation method, the mechanism by which the method produces ε-SGOI has also not been clearly explained and the surface properties have not been evaluated. Thus, we investigated the condensation mechanism and the effect of temperature in detail by characterizing the surface property and the Ge profile in the SiGe layer. A SiGe layer on silicon-on-insulator layer was epitaxial grown at 550°C, and three oxidation thicknesses at 40, 60, and 90 nm were grown at 950°C The Ge concentration was increased from 15 to 38.6%, 46.4%, and 63.2%. In the experiment to measure the effect of temperature, the root mean square decreased from 0.175 to 3.412 nm, and the uniformity of Ge improved when the oxidation temperature was increased from 950 to 1100°C Therefore, our talk will focus on the explanation for the mechanism by which using the condensation method produces e-SGOI by characterizing the surface property, the thickness of the SiGe, the remaining Si thickness on the insulator, the Ge concentration in the SiGe layer, and the oxidation temperature.