Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
- Authors
- Ku, Boncheol; Abbas, Yawar; Sokolov, Andrey Sergeevich; Choi, Changhwan
- Issue Date
- Feb-2018
- Publisher
- ELSEVIER SCIENCE SA
- Keywords
- Reram; Plasma treatment; Surface modification; ALD HfO2
- Citation
- JOURNAL OF ALLOYS AND COMPOUNDS, v.735, pp.1181 - 1188
- Indexed
- SCIE
SCOPUS
- Journal Title
- JOURNAL OF ALLOYS AND COMPOUNDS
- Volume
- 735
- Start Page
- 1181
- End Page
- 1188
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17818
- DOI
- 10.1016/j.jallcom.2017.11.267
- ISSN
- 0925-8388
- Abstract
- The improved resistive switching (RS) characteristics of Pt/HfO2/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation. The Ar plasma treatment was intentionally carried out on the surface of atomic layer deposited (ALD) HfO2 thin films to modulate the conducting filament size affecting RS behaviors. Compared to ALD HfO2 RRAM without Ar plasma treatment, the Ar plasma treatment on the surface of ALD HfO2 thin film leads to forming-free process, faster switching speed, tighter low resistance state (LRS) and high resistance state (HRS) current distribution, smaller variations of SET voltage and RESET voltage, and enhanced retention/endurance characteristics under HRS. These improvements are believed to be the generation of favorably modulated interface oxide layer between HfO2 and Ti. In addition, current conduction mechanism is dominated by ohmic behavior in LRS while ohmic, space charge limited conduction (SCLC), and trap filled SCLC are observed at HRS with different field regions. The Ar plasma irradiation can be an easy and facile way to achieve the reliable and uniform RRAM characteristics. (C) 2017 Elsevier B.V. All rights reserved.
- Files in This Item
-
Go to Link
- Appears in
Collections - 서울 공과대학 > 서울 신소재공학부 > 1. Journal Articles
![qrcode](https://api.qrserver.com/v1/create-qr-code/?size=55x55&data=https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/17818)
Items in ScholarWorks are protected by copyright, with all rights reserved, unless otherwise indicated.