Characteristics of cobalt films deposited by metal organic chemical vapor deposition method using dicobalt hexacarbonyl tert-butylacetylene
- Authors
- Lee, Keunwoo; Park, Taeyong; Lee, Jaesang; Kim, Jinwoo; Kim, Jeongtae; Kwak, Nohjung; Yeom, Seungjin; Jeon, Hyeongtag
- Issue Date
- Jul-2008
- Publisher
- IOP PUBLISHING LTD
- Keywords
- metal organic chemical vapor deposition; CCTBA precursor; cobalt disilicide; step coverage
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v.47, no.7, pp.5396 - 5399
- Indexed
- SCIE
SCOPUS
- Journal Title
- JAPANESE JOURNAL OF APPLIED PHYSICS
- Volume
- 47
- Number
- 7
- Start Page
- 5396
- End Page
- 5399
- URI
- https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178195
- DOI
- 10.1143/JJAP.47.5396
- ISSN
- 0021-4922
- Abstract
- Cobalt films were deposited by metal organic chemical vapor deposition (MOCVD) usino C12H10O6(Co)(2) (dicobalt hexacarbonyl tert-butyl acetylene, CCTBA) as the Co precursor and H-2 reactant gas. The impurity content of the Co films was monitored as a function of the partial pressure of H, reactant gas. The carbon and oxygen content of as-deposited Co films greatly decrease with the increase of H-2 partial pressure, and at H-2 partial pressure of 10Torr and a substrate temperature of 150 degrees C were 2.8 at. % and less than I at. %, respectively. As the H, partial pressure increased, carbon and oxygen content decreased markedly. Excellent conformality of Co film over 80% was achieved on a patterned wafer with aspect ratio of 15 : 1,0. 12 mu m wide and 1.8 mu m deep. The phase transition was analyzed with X-ray diffraction (XRD) depending on RTA temperature. CoSi was observed at 500 degrees C annealing, and was transformed to CoSi2 at 600 degrees C annealing. In addition, Auger electron spectroscopy (AES) data showed a 1 : 2 atomic ratio of Co : Si in the CoSi2 layer.
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