Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method
DC Field | Value | Language |
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dc.contributor.author | Lee, Woo Gyo | - |
dc.contributor.author | Kim, Yong Kyun | - |
dc.contributor.author | Kim, Jong Kyung | - |
dc.contributor.author | Starzhinskiy, Nicolai | - |
dc.contributor.author | Ryzhikov, Vladimir | - |
dc.contributor.author | Grinyov, Boris | - |
dc.date.accessioned | 2022-12-21T02:48:42Z | - |
dc.date.available | 2022-12-21T02:48:42Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 0022-3131 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178541 | - |
dc.description.abstract | Zinc selenide crystals were grown in graphite crucibles by the Bridgman-Stockbarger method in a vertical compression furnace under argon pressure of 5x10(6) Pa. From the absorption spectra, the band gap energies of the ZnSe single crystals were calculated by a linear fitting process. The maximum wavelength of the emission spectrum of the ZnSe:Te,O scintillator was 630 nm, which was well matched with the response wavelength of the Si photodiode. The energy resolution of the ZnSe:Te,0 scintillator was 11.9% when it was exposed to (CS)-C-137 gamma-ray. Its size was 10 x 10 x 1 mm(3). The afterglow level of the ZnSe:Te,O scintillator after 5 ms was 0.023%. The relative light output of the ZnSe:Te,O scintillator was 2.167 times higher than CsI:Tl. The luminescence decay time of the ZnSe:Te,O scintillator has two exponential components with 27 and 84 mu s time constant. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | Properties of ZnSe:Te,O Crystals Grown by Bridgman-Stockbarger Method | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Yong Kyun | - |
dc.identifier.doi | 10.1080/00223131.2008.10875921 | - |
dc.identifier.scopusid | 2-s2.0-84912053545 | - |
dc.identifier.wosid | 000267196000151 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, pp.579 - 581 | - |
dc.relation.isPartOf | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | - |
dc.citation.startPage | 579 | - |
dc.citation.endPage | 581 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | N | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | ZNSE(TE) | - |
dc.subject.keywordPlus | CWO | - |
dc.subject.keywordAuthor | ZnSe | - |
dc.subject.keywordAuthor | semiconductor scintillator | - |
dc.subject.keywordAuthor | absorption | - |
dc.subject.keywordAuthor | emission | - |
dc.subject.keywordAuthor | afterglow | - |
dc.identifier.url | https://www.tandfonline.com/doi/abs/10.1080/00223131.2008.10875921 | - |
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