6H-SiC Solid State Detector Development for a Neutron Measurement
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ha, Jang Ho | - |
dc.contributor.author | Kang, Sang Mook | - |
dc.contributor.author | Park, Se Hwan | - |
dc.contributor.author | Kim, Han Soo | - |
dc.contributor.author | Kim, Yong Kyun | - |
dc.date.accessioned | 2022-12-21T02:50:10Z | - |
dc.date.available | 2022-12-21T02:50:10Z | - |
dc.date.created | 2022-08-26 | - |
dc.date.issued | 2008-06 | - |
dc.identifier.issn | 0022-3131 | - |
dc.identifier.uri | https://scholarworks.bwise.kr/hanyang/handle/2021.sw.hanyang/178551 | - |
dc.description.abstract | A new solid state detector based on 6H-SiC is one of the promising devices in the nuclear industry for high-level radiation applications in a harsh high-temperature environment. SiC is a semi-conductor with a 3.03-eV band gap energy, and known as a radiation-resistance material. SiC detectors were fabricated by using a 6H-SiC wafer. The properties of the 6H-SiC wafer were over a 106 ohm-cm resistivity, a 380 mu m thickness, and a (0001)-oriented type. The 6H-SiC detector was prepared by the processes of a dicing, etching, removal of an oxidation layer and a mounting on an alumina substrate. SiC detector was 10x10 mm(2) with a 19.6mm(2) active area. The circular metal contacts consisted of a Si-face/Ni/Au and a C-face/Ni/Au structure. Thin LiF and B film was coated onto the SiC detector surface for a neutron converter. The electrical current-voltage performances of the detectors were measured by using the Keithley 4200-SCS parameter analyzer with self voltage sources. Neutron responses were measured by using a Cf-252 source. | - |
dc.language | 영어 | - |
dc.language.iso | en | - |
dc.publisher | TAYLOR & FRANCIS LTD | - |
dc.title | 6H-SiC Solid State Detector Development for a Neutron Measurement | - |
dc.type | Article | - |
dc.contributor.affiliatedAuthor | Kim, Yong Kyun | - |
dc.identifier.doi | 10.1080/00223131.2008.10875861 | - |
dc.identifier.scopusid | 2-s2.0-84860411243 | - |
dc.identifier.wosid | 000267196000091 | - |
dc.identifier.bibliographicCitation | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY, pp.352 - 355 | - |
dc.relation.isPartOf | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | - |
dc.citation.title | JOURNAL OF NUCLEAR SCIENCE AND TECHNOLOGY | - |
dc.citation.startPage | 352 | - |
dc.citation.endPage | 355 | - |
dc.type.rims | ART | - |
dc.type.docType | Article; Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.description.isOpenAccess | Y | - |
dc.description.journalRegisteredClass | scie | - |
dc.description.journalRegisteredClass | scopus | - |
dc.relation.journalResearchArea | Nuclear Science & Technology | - |
dc.relation.journalWebOfScienceCategory | Nuclear Science & Technology | - |
dc.subject.keywordPlus | Alumina | - |
dc.subject.keywordPlus | Energy gap | - |
dc.subject.keywordPlus | High temperature applications | - |
dc.subject.keywordPlus | Interference suppression | - |
dc.subject.keywordPlus | Neutron detectors | - |
dc.subject.keywordPlus | Neutron sources | - |
dc.subject.keywordPlus | Neutrons | - |
dc.subject.keywordPlus | Nuclear industry | - |
dc.subject.keywordPlus | Radiation detectors | - |
dc.subject.keywordPlus | Semiconductor detectors | - |
dc.subject.keywordPlus | Semiconductor materials | - |
dc.subject.keywordPlus | Silicon wafers | - |
dc.subject.keywordAuthor | solid state detector | - |
dc.subject.keywordAuthor | semiconductor | - |
dc.subject.keywordAuthor | silicon carbide | - |
dc.subject.keywordAuthor | neutron measurement | - |
dc.subject.keywordAuthor | surface barrier detector | - |
dc.identifier.url | https://www.tandfonline.com/doi/abs/10.1080/00223131.2008.10875861 | - |
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